PART |
Description |
Maker |
MX29SL800CTXHC-90 MX29SL800CTXHC-90G MX29SL800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电压仅1.8V的闪
|
Macronix International Co., Ltd. PROM
|
MX29LV800CTXHC-90 MX29LV800CTXHC-90G MX29LV800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PBGA48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO44 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电V时仅闪存 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO44 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PBGA48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
MX29SL800CBTI-90 MX29SL800CTXHI-90G MX29SL800CTXBC |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
|
Macronix International http://
|
KM23V8000D |
8M-Bit (1Mx8) CMOS Mask ROM(8M(1Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MX27C8100 MX27C8100MC-10 MX27C8100MC-12 MX27C8100M |
8M-BIT [1M x8/512K x16] CMOS OTP ROM
|
MCNIX[Macronix International]
|
MX27C4111PC-90 27C4111-10 27C4111-12 27C4111-15 27 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
MCNIX[Macronix International]
|
MX27C4111 27C4111 |
4M-BIT [512K x8/256K x16] CMOS EPROM From old datasheet system
|
Macronix 旺宏
|
HY62SF16804B HY62SF16804B-C HY62SF16804B-DFC HY62S |
RES, 33, 1/2W, TKF, 5%, 2010 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
|
Hynix Semiconductor Inc.
|
TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16),5伏只,闪 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16),5伏只,闪
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
KM23C8000D KM23C8000DG |
8M-Bit (1Mx8) CMOS Mask ROM(8M1Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
AS29LV400 AS29LV400B-70TC AS29LV400B-70TI AS29LV40 |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time 3V 512K x 8/256K x16 CMOS Flash EEPROM
|
Alliance Semiconductor List of Unclassifed Manufacturers
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